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BC847S Datasheet PDF
- DUAL TRANSISTOR - Transistor
JC(T JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S DUAL TRANSISTOR (NPN+NPN) APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous PD Power Dissipation 00 200 RθJA Thermal Resistance. Junction
JCET - NPN Transistor - Transistor
RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 FEATURES Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TDC current ga
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