JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC847PN DUAL TRANSISTOR (NPN+PNP)
SOT-363
FEATURES - Epitaxial Die Construction
- Two isolated NPN, PNP(BC847W+BC857W) Transistors in one package
MAKING: 7P
MAXIMUM RATINGS TR1 (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50 V
VCEO
Collector-Emitter Voltage
45 V
VEBO
Emitter-Base Voltage
6V
IC
Collector Current Continuous
0.1
A
PC
JCET
Complementary Surface Mount General Purpose Si-Planar Transistors - Transistor
BC847PN
BC847PN
NPN PNP
Complementary Surface Mount General Purpose Si-Planar Transistors Komplement re Si-Planar Transistoren f r die Oberfl chenmontage
Version 2006-09-05
2±0.1 2 x 0.65 65
4
0.9±0.1
Type Code
123
2.4
Dimensions - Maße [mm] 6 = C1 5 = B2 4 = E2 1 = E1 2 = B1 3 = C2
2.1±0.1 1.25±0.1
Power dissipation Verlustleistung Plastic case Kunststoffgeh use Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert Stand