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BC640 Datasheet PDF
- SILICON PLANAR EPITAXIAL TRANSISTORS - Transistor
Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" ECB High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Tot
CDIL - PNP Type Plastic Encapsulate Transistors - Transistor
Elektronische Bauelemente BC636, 638, 640 PNP Type Plastic Encapsulate Transistors FEATURE Power Dissipation: PCM: 0.83 mW (Tamb=25oC) RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.5±0.2 TO-92 4.55±0.2 3.5±0.2 14.3±0.2 MAXIMUM RATINGS (TA=25 oC unless otherwise specified) 0.4 6+ 00..11 0.43+ 00..0078 (1.27 Typ). 123 1.25+ 00..22 2.54±0.1 1: Emitter 2: Collector 3: Base PARAMETERS SYMBOLS Collector - Emitter Voltage BC636 VCEO BC638 Collector -
SeCoS
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