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BC317B Datasheet PDF
- NPN SILICON PLANAR EPITAXIAL TRANSISTOR - Transistor
Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317, A, B TO-92 Plastic Package EBC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj,
CDIL - AMPLIFIER TRANSISTORS - Transistor
BC317, A, B BC318, A, B, C BC319, A, B CASE 29-02, STYLE 1 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to BC549 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction
Motorola Semiconductors
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