DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
BAS45A Low-leakage diode
Product speci cation Supersedes data of June 1994 1996 Mar 13
Philips Semiconductors
Product speci cation
Low-leakage diode
FEATURES Continuous reverse voltage: max. 125 V Repetitive peak forward current: max. 625 mA Low reverse current: max. 1 nA Switching time: typ. 1.5 s. APPLICATION Low leakage current applications.
k handbook, halfpage a
BAS45A
DESCRIPTION Epitaxial medium-speed switching diode wi
NXP Semiconductors
Low-leakage diode - Diode
BAS45AL
Low-leakage diode
Rev. 5 6 August 2010
Product data sheet
1. Product profile
1.1 General description
Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
Continuous reverse voltage: max. 125 V Repetitive peak forward current: max. 625 mA Low reverse current: max. 1 nA Switching time: typ. 1.5 μs
1.3 Applications
Low leakage current application