BAQ33...BAQ35
Vishay Telefunken
Silicon Planar Diodes
Features
D Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers
94 9371
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g Test Conditions Type BAQ33 BAQ34 BAQ35 Symbol VR VR VR IFSM IF Tj Tstg Value 30 60 125 2 200 200 65...+200 Unit V V V A mA °C °C
Peak forward surge current Forward current Junction temperature Storage temperature range
tp=1ms
Ma
Vishay Telefunken
Silicon Planar Diodes - Diode
BAQ333...BAQ335
Vishay Telefunken
Silicon Planar Diodes
Features
D D D D
Saving space Hermetic sealed parts Fits onto SOD 323 , SOT 23 footprints Electrical data identical with the devices BAQ33...BAQ35 , BAQ133...BAQ135
96 12315
D Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g Test Conditions Type BAQ333 BAQ334 BAQ335 Symbol VR VR VR IFSM IF Tj Tst