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AT28HC64B Datasheet PDF
- 64K (8K x 8) High-speed Parallel EEPROM - Data
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option Ref. AT28HC64BF Datasheet) 1 to 64-byte Page Write Operation Low Power Dissipation 40 mA Active Current 100 A CMOS Standby Current Hardware and Software Data Protection DATA Polling and Toggle Bit for End of Write Detection High Reliability CMOS Technology Endurance: 100,000 C
ATMEL Corporation - 64K (8K x 8) High Speed Parallel EEPROM - Data
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 2 ms Maximum (Standard) 1 to 64-byte Page Write Operation Low Power Dissipation 40 mA Active Current 100 A CMOS Standby Current Hardware and Software Data Protection DATA Polling and Toggle Bit for End of Write Detection High Reliability CMOS Technology Endurance: 100,000 Cycles Data Retention: 10 Years Single 5 V ±10%
ATMEL Corporation
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