Up to 4 GHz Linear Power Silicon Bipolar Transistor - Transistor
Up to 4 GH- Linear Power Silicon Bipolar Transistor Technical Data
AT-64023
Features
High Output Power: 27.5 dBm Typical P1 dB at 2.0 GH- 26.5 dBm Typical P1 dB at 4.0 GH- High Gain at 1 dB Compression: 12.5 dB Typical G1 dB at 2.0 GH- 9.5 dB Typical G1 dB at 4.0 GH- 35% Total Efficiency Emitter Ballast Resistors Hermetic, Metal, Beryllia Stripline Package
Description
The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal