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AS5SS256K36 Datasheet PDF
- 256K x 36 SSRAM - RAM
256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM FEATURES Organized 256K x 36 Fast Clock and OE\ access times Single +3.3V +0.3V, -0.165V power supply (VDD) SNOOZE MODE for reduced-power standby Common data inputs and data outputs Individual BYTE WRITE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipelining Clock-controlled and registered addresses, data I, Os and control signals Internally self-timed WRITE cycle Burst control (interleaved or l
Micross - 256K x 36 SSRAM Flow-Through Synchronous Burst SRAM - RAM
Austin Semiconductor, Inc. 256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM FEATURES ! ! ! ! ! ! ! AS5SS256K36 & AS5SS256K36A PIN ASSIGNMENT (Top View) SSRAM ! ! ! ! ! ! Organized 256K x 36 Fast Clock and OE\ access times Single +3.3V +0.3V, -0.165V power supply (VDD) SNOOZE MODE for reduced-power standby Common data inputs and data outputs Individual BYTE WRITE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipelining Clock-controlled and registered
Austin Semiconductor
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