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AS5SS256K18 Datasheet PDF

  • 256K x 18 SSRAM - RAM

    SSRAM AS5SS256K18 256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through FEATURES Fast access times: 8, 10, and 15ns Fast clock speed: 113, 100, and 66 MH- Fast clock and OE\ access times SSNinOglOe Z+E3.3MVO±D5E%foprorwedeur cseudp-pployw(VerDsDt)andby Common data inputs and data outputs Individual BYTE WRTIE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipelining Clock-controlled and registered addresses, data I, Os and control signals

    Micross
    Micross


  • 256K x 18 SSRAM Synchronous Burst SRAM - RAM

    SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through FEATURES Fast access times: 8, 10, and 15ns Fast clock speed: 113, 100, and 66 MH- Fast clock and OE\ access times Single +3.3V +0.3V, -0.165V power supply (VDD) SNOOZE MODE for reduced-power standby Common data inputs and data outputs Individual BYTE WRTIE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipelining Clock-controlled and registered addresses, data I, Os

    Austin Semiconductor
    Austin Semiconductor




 






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