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AS29LV800 Datasheet PDF
- 3V 1M8/512K16 CMOS Flash EEPROM - CMOS
Advanced Information October 2000 ® AS29LV800 3V 1M×8, 512K×16 CMOS Flash EEPROM Features Organization: 1M×8, 512K×16 Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture T (top) or B (bottom) - Erase any combination of sectors or full chip Single 2.7-3.6V power supply for read, write operations Sector protection High speed 80, 90, 120 ns address access time Automated on-c
ANADIGICS Inc - 3V 1M x 8/512K x 16 CMOS Flash EEPROM - CMOS
March 2001 AS29LV800 ® 3V 1M × 8, 512K × 16 CMOS Flash EEPROM Features Organization: 1M×8, 512K×16 Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture T (top) or B (bottom) - Erase any combination of sectors or full chip Single 2.7-3.6V power supply for read, write operations Sector protection High speed 70, 80, 90, 120 ns address access time Automated on-chip programmi
Alliance Semiconductor
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