N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS - MOSFET
D
TO-247
G S
APT6030BN 600V
®
23.0A 0.30Ω 22.0A 0.33Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT6033BN 600V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT 6030BN APT 6033BN UNIT Volts Amps
600 23 92 ± 30 360 2.9
600 22 88
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor O