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APM2701CG Datasheet PDF
- Dual Enhancement Mode MOSFET - MOSFET
APM2701CG Dual Enhancement Mode MOSFET (N and P-Channel) Features N-Channel 20V, 3A, RDS(ON)=50m Ω(typ.) @ VGS=4.5V RDS(ON)=90m Ω(typ.) @ VGS=2.5V Pin Description Top View G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 P-Channel -20V, -1.5A, RDS(ON)=145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V JSOT-6 Top View of JSOT-6 (6)D1 (2)S2 Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (1)G1 (3)G2 Applications Power Management in Notebook Compute
Anpec - Dual Enhancement Mode MOSFET - MOSFET
SMD Type MOSFET Product specification APM2701CG ¡ Features ¡ N-Channel º V DS=20V I D=3A ¡ ¡ RDS(ON) ¼70m ¸ (V GS = 4.5V) RDS(ON) ¼110m ¸ (VGS = 2.5V) ( SOT-23-6 ) Unit: mm ¡ P-Channel º VDS =-20V ID=-1.5A ¡ ¡ RDS(ON) ¼190m ¸ (VGS =-4.5V) 0to0.1 RDS(ON) ¼235m ¸ (VGS =-2.5V) G1 S2 G2 D1 S2 G1 S1 G2 D2 n-channel p-channel ¡ Absolute Maximum Ratings Ta = 25¡æ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
TY Semiconductor
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