AP9915H, J
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current
▼ Single
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
20V 50mΩ 20A
G S
Drive Requirement
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS