AP3310H, J
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability
P-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
-20V 150mΩ -10A
G S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. This device is suited for low voltage and battery power applications.
G D S G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TA