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AP28G45EM Datasheet PDF
- N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR - Transistor
AP28G45EM Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability ▼ 3.3V Gate Drive ▼ Strobe Flash Applications C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Op
Advanced Power Electronics
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