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AO6401 Datasheet PDF
- P-Channel Enhancement Mode Field Effect Transistor - Transistor
AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 specifications). AO6401L is a Green Product ordering option. AO6401 and AO6401L are electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10
Alpha & Omega Semiconductors - P-Channel Enhancement Mode Field Effect Transistor - Transistor
AO6401A P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6401A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V) D TSOP6 Top
Alpha & Omega Semiconductors
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