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AO4850 Datasheet PDF
- Dual N-Channel Enhancement Mode Field Effect Transistor - Transistor
AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V (VGS = 10V) ID = 3.1A RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 G2 S2 SOIC-8 Absolute
Alpha & Omega Semiconductors
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