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AO4464 Datasheet PDF
- N-Channel Enhancement Mode Field Effect Transistor - Transistor
AO4464 N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) The AO4464 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4464
Alpha & Omega Semiconductors
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