ACE3401
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a ve
ACE Technology
P-Channel Enhancement Mode Field Effect Transistor - Transistor
ACE3401D
P-Channel Enhancement Mode Field Effect Transistor
Description This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities.
Features
VDS(V)=-30V, ID=-3A RDS(ON)<63mΩ @ VGS=-10V Voltage controlled p-channel small signal switch High density cell design for low RDS(