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ACE1512E Datasheet PDF
- N-Channel MOSFET - MOSFET
ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features VDS (V)=20V ID=6.5A (VGS=4.5V) RDS(ON)<21mΩ (VGS=4.5V) RDS(ON)<25mΩ (VGS=2.5V) RDS(ON)<33mΩ (VGS=1.8V) ESD Protected : 2000V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage
ACE Technology
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