TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1296
Power Amplifier Applications Power Switching Applications
2SA1296
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A Complementary to 2SC3266.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 20 V
Emitter-base voltage
VEBO 6 V
Collector current
IC 2 A
Base current
IB 0.5 A
Collector power dissipation