|
4N55 Datasheet PDF
- N-Channel MOSFET Transistor - MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N55 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 550 ±30 4 V V A ID(puls) Pulse Drain Current 10 A Ptot Total Dissipation@TC=25�
Inchange Semiconductor - Hermetically Sealed/ Transistor Output Optocouplers for Analog and Digital Applications - Transistor
H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Technical Data 4N55* 5962-87679 HCPL-553X HCPL-653X HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features Dual Marked with Device Part Number and DESC Drawing Number Manufactured and Tested on a MIL-PRF-38534 Certified Line QML-38534, Class H and K Five Hermetically Sealed Package Configurations Performance Guaranteed, Over -55°C to +125°C High Speed: Typically 400 kBit, s.gif)
Agilent(Hewlett-Packard)
|
|
Please enter the part name