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3SK166 Datasheet PDF
- GaAs N-channel Dual Gate MES FET - Gate
3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features Low voltage operation Low noise: NF = 1.2dB (typ.) at 800MH- High gain: Ga = 20dB (typ) at 800MH- High stability Application UHF
Sony Corporation - GaAs N-channel Dual Gate MES FET - Gate
3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features Low voltage operation Low noise: NF = 1.2dB (typ.) at 800MH- High gain: Ga = 20dB (typ) at 800MH- High stability Application UHF
Sony Corporation
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