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3DD57 Datasheet PDF
- NPN silicon low-frequency high-power transistors - Transistor
3DD56, 3DD57 型 NPN 硅低 大功率晶 管 符 件 范 位 ABCDE F PCM TC=75℃ 10 W ICM 限 Tjm Tstg Rth VCE=10V IC=0.2A 3 175 -55~150 10 A ℃ ℃ ℃, W V(BR)CBO ICB=3mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V V(BR)CEO ICE=3mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V V(BR)EBO IEB=5mA ≥5.0 V 直 ICBO VCB=20V ≤0.5 mA 流 ICEO IEBO VBEsat VCEsat VCE=20V VEB=4V IC=0.75A IB=0.15A ≤1.0 ≤0.5 ≤1.0 ≤1.0 mA mA V VCE=5V hFE IC=0.75A 15~18
ETC - NPN Silicon Low Frequency High Power Transistor - Transistor
3DD57, 3DD60 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify,power adjustment,DC conversion. 4. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Brea
Shaanxi Qunli Electric
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