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3DD164 Datasheet PDF
- Low-power silicon NPN transistor - Transistor
3DD164 型 NPN 硅低 大功率晶 管 符 件 PCM ICM 限 Tjm Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO 直 ICBO 流 ICEO IEBO VBEsat VCEsat hFE TC=75℃ VCE=10V IC=3A ICB=5mA ICE=5mA IEB=5mA VCB=50V VCE=50V VEB=4V IC=5A IB=1A VCE=5V IC=5A 范 ABCDE FG 100 10 175 -55~150 1 ≥80 ≥150 ≥200 ≥250 ≥350 ≥400 ≥600 ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 ≥400 ≥5.0 ≤1.5 ≤2.0 ≤1.5 ≤1.8 ≤1.5 15~180 位 W A ℃ ℃ ℃, W V V V mA mA mA V 外 引 1. E 射 2. B 基
ETC - NPN Silicon Low Frequency High Power Transistor - Transistor
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD164(166), 3DD167(169) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP
Qunli Electric
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