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3DD15C Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V
Inchange Semiconductor
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