Silicon Junction FETs (Small Signal)
2SK65
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q Diode is connected between gate and source q Low noise voltage
unit: mm
4.5±0.1 2.0±0.2 1.0
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperatur
Panasonic Semiconductor
Silicon N-Channel Junction FET - MOSFET
Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temper