Silicon N Channel MOS Type Field Effect Transistor - Transistor
2SK2998
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV)
2SK2998
Chopper Regulator, DC DC Converter Applications
Unit: mm
- Low drain source ON-resistance
: RDS (ON) = 11.5 Ω (typ.)
- High forward transfer admittance
: |Yfs| = 0.4 S (typ.)
- Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
- Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain source voltage
VDSS