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2SJ601 Datasheet PDF
- SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE - Data
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ601 2SJ601-Z PACKAGE TO-251 TO-252 FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 46 mΩ MAX. (VGS = 4.0 V, ID = 18 A) Low Ciss: Ciss = 3300 pF TYP. Built-in gate protection diode TO-251,
NEC - MOS Field Effect Transistor - Transistor
SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET Features Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A) Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 Low Ciss: Ciss = 3300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 P
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