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2SJ598 Datasheet PDF
- SWITCHING P-CHANNEL POWER MOS FET - Data
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed ORDERING INFORMATION PART NUMBER 2SJ598 2SJ598-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 190 mΩ MAX. (VGS = 4.0 V, ID = 6 A) Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode TO-251, TO-252 pac
NEC - MOS Field Effect Transistor - Transistor
SMD Type MOS Field Effect Transistor IC MOSFET 2SJ598 TO-252 +0.15 1.50-0.15 Features Low on-resistance RDS(on)1 = 130 m RDS(on)2 = 190 m MAX. (VGS =-10 V, ID = -6 A) MAX. (VGS = -4.0 V, ID =-6 A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 2
Guangdong Kexin Industrial
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