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2SJ297 Datasheet PDF
- Silicon P-Channel MOS FET - Data
2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SJ297(L), 2SJ297(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain
Hitachi - Silicon P-Channel MOS FET - Data
2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SJ297(L), 2SJ297(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain
Hitachi
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