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2SD458 Datasheet PDF
- Silicon NPN Power Transistors - Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD458 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Power Dissipation: PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 50Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Inchange Semiconductor
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