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2SD2406 Datasheet PDF
- Silicon NPN Triple Diffused Type TRANSISTOR - Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications 2SD2406 Unit: mm High power dissipation: PC = 25 W (Tc = 25°C) Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCBO VCEO VEBO IC IB PC 80 V 80 V 5V 4A 0.4 A 25 W Junction temperature Storage temperature range T
Toshiba Semiconductor
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