Audio Frequency Power Amplifier and Low Speed Switching Industrial Use - Transistor
ETC
Silicon NPN Darlington Power Transistor - Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1590
DESCRIPTION ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A ·Complement to Type 2SB1099
APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base