|
2SD1509 Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1509 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V
Inchange Semiconductor - NPN Epitaxial Type Transistor ( 80V, 2A ) - Transistor
Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Toshiba Semiconductor
Download 2SD1509.PDF
|
|
Please enter the part name