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2SD1500 Datasheet PDF
- Power Transistor - Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1500 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 150 100 8 10 1
Inchange Semiconductor
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