Ordering number:ENN2007A
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1419, 2SC3649
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high-
density hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1419, 2SC3649]
4.5 1.6 1.5
1.0 2.5 4.25max
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4 0.5
3 1.5 2 3.0
1
0.75
0.4
1 : Base 2 : Col
Sanyo Semicon Device
Bipolar Transistor - Transistor
Ordering number : EN2007C
2SA1419, 2SC3649
Bipolar Transistor
( )160V, ( )1.5A, Low VCE(sat), (PNP)NPN Single PCP
http:, , onsemi.com
Features
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Speci cations ( ) : 2SA1419
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Co