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2SC2631 Datasheet PDF
- Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) - Transistor
Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 5.0±0.2 5.1±0.2 Unit: mm 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 150 150 5 100 50 750 150
Panasonic Semiconductor - Transistor, Silicon PNP Epitaxial Type - Transistor
Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 5.0±0.2 5.1±0.2 Unit: mm 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 150 150 5 100 50 750 150
Panasonic Semiconductor
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