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2SC2026 Datasheet PDF
- NPN SILICON TRANSISTOR - Transistor
NEC - Silicon NPN RF Transistor - Transistor
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MH- ·High Power Gain Gpe= 15dB TYP. @ f= 500MH- ·High Gain Bandwidth Product fT= 2.0GH- TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collec
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