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2SC1972 Datasheet PDF
- NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) - Transistor
Mitsubishi Electric Semiconductor - NPN SILICON RF POWER TRANSISTOR - Transistor
2SC1972 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 3.5 A 35 V 25 W @ TC = 25 °C -55 °C to +175 °C 6.0 °C, W 1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER CHARACTERISTICS SYMBOL BVCEO
ASI
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