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2SB798 Datasheet PDF
- PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD - Transistor
NEC - POWER TRANSISTOR - Transistor
UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) ORDERING INFORMATION Order Number 2SB798G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter
Unisonic Technologies
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