Transistor
2SB779
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
s Features
q q q
2.8 0.3 0.65±0.15
+0.2
+0.25 1.5 0.05
0.65±0.15
2
1.1 0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 25 20 7 1 0.5 200 150 55 ~ +150
Unit V V V A A mW ˚C �