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2SAR573D Datasheet PDF
- Silicon PNP Power Transistor - Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SAR573D DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.4V@(IC=-1A,IB=-50mA) ·Complementary NPN types:2SCR573D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO
Inchange Semiconductor - PNP -3.0A -50V Middle Power Transistor - Transistor
2SAR573D PNP -3.0A -50V Middle Power Transistor Parameter VCEO IC Value -50V -3A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR573D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC, IB=-1A, -50mA) 4) Lead Free, Rohs Compliant lOutline CPT 2SAR573D lInner circuit Datasheet B: BASE C: COLLECTOR E: EMITTER lApplication Motor driver,LED driver Power supply lPackaging specifications Part No
ROHM Semiconductor
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