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2N7002M Datasheet PDF
- MOSFET, Transistor - MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M DESCRIPTION High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, powe
Jiangsu Changjiang Electronics - N-Channel Small Signal MOSFET - MOSFET
N-Channel Small Signal MOSFET FEATURES ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability 2N7002MTF BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA SOT-23 Product Summary Part Number 2N7002 BVDSS 60V RDS(on) 5.0Ω ID 115mA 1.Gate 2. Source 3. Drain Absolute Maximum Ratings Symbol VDSS ID IDM Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Dr
Fairchild Semiconductor
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