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2N6299 Datasheet PDF
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS - Transistor
2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Conti
Central Semiconductor - PNP DARLINGTON POWER SILICON TRANSISTOR - Transistor
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500, 540 Devices 2N6298 2N6299 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) TC = 1000C @ Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 0.428 W, 0C above T
Microsemi
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