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2N5108 Datasheet PDF
- HIGH FREQUENCY TRANSISTOR - Transistor
2N5108 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation (a Tq = 25°C Derate above 25°C Storage Temperature Symbol vCEO VCER v CBO v EBO c PD Tstg Value 30 55 55 3.0 0.4 3.5 0.02 - 65 to + 200 Unit Vdc Vdc Vdc Vdc Adc Watts mW, °C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON w ELECTRICAL CHARACTERISTICS (TA = 25°C un
Motorola Semiconductors - Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5108 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MH- (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE APPLICATIONS ·Designed for general purpose Class C amplifier applications up to 1 GHz ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 55 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4V IC Colle
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