28C16A
16K (2K x 8) CMOS EEPROM
FEATURES
Fast Read Access Time 150 ns CMOS Technology for Low Power Dissipation - 30 mA Active - 100 A Standby Fast Byte Write Time 200 s or 1 ms Data Retention >200 years High Endurance - Minimum 104 Erase, Write Cycles Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches Data polling Chip Clear Operation Enhanced Data Protection - VCC Detector - Pulse Filter - Write Inhibit Electron