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20N60C5 Datasheet PDF
- IXKH20N60C5 - Data
IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS = 600 V R =DS(on) max 0.2 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV, dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 6.6 A; TC = 25°C MOSFET dV, dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V 20 A 13 A 435 mJ 0.66 mJ 50 V, ns Symbol R
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