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20N50 Datasheet PDF
- N-Channel MOSFETS - MOSFET
N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. 20N50 V DSS RDS(ON ) ID 500V 0.26Ω
OGFD - N-CHANNEL POWER MOSFET - MOSFET
UNISONIC TECHNOLOGIES CO., LTD 20N50 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current, etc. The UTC 20N50 is suitable for switching regulator application, etc. FEATURES * RDS(on) < 0.27Ω @ VGS=10V, ID=10A * High switching speed * Low leakage current SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMA
Unisonic Technologies
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